Title :
Application Exploration for 3-D Integrated Circuits: TCAM, FIFO, and FFT Case Studies
Author :
Davis, W. Rhett ; Oh, Eun Chu ; Sule, Ambarish M. ; Franzon, Paul D.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC
fDate :
4/1/2009 12:00:00 AM
Abstract :
3-D stacking and integration can provide system advantages. This paper explores application drivers and computer-aided design (CAD) for 3-D integrated circuits (ICs). Interconnect-rich applications especially benefit, sometimes up to the equivalent of two technology nodes. This paper presents physical-design case studies of ternary content-addressable memories (TCAMs), first-in first-out (FIFO) memories, and a 8192-point fast Fourier transform (FFT) processor in order to quantify the benefit of the through-silicon vias in an available 180-nm 3-D process. The TCAM shows a 23% power reduction and the FFT shows a 22% reduction in cycle-time, coupled with an 18% reduction in energy per transform.
Keywords :
CAD; elemental semiconductors; integrated circuit design; integrated circuit interconnections; microprocessor chips; silicon; 3-D integrated circuits; 8192-point fast Fourier transform processor; FFT; FIFO; Si; TCAM; application drivers; computer-aided design; cycle-time reduction; first-in first-out memories; interconnect-rich applications; physical-design case studies; power reduction; ternary content-addressable memories; through-silicon vias; Application software; Costs; Delay; Design automation; Integrated circuit interconnections; Integrated circuit technology; Packaging; Stacking; Three-dimensional integrated circuits; Through-silicon vias; 3-D integrated circuit (IC); Fast Fourier transform (FFT); first-in first-out (FIFO); ternary content-addressable memory (TCAM);
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
DOI :
10.1109/TVLSI.2008.2009352
