DocumentCode :
1198283
Title :
Analysis and Design of a Dynamic Predistorter for WCDMA Handset Power Amplifiers
Author :
Yamanouchi, Shingo ; Aoki, Yuuichi ; Kunihiro, Kazuaki ; Hirayama, Tomohisa ; Miyazaki, Takashi ; Hida, Hikaru
Author_Institution :
NEC Corp., Kawasaki
Volume :
55
Issue :
3
fYear :
2007
fDate :
3/1/2007 12:00:00 AM
Firstpage :
493
Lastpage :
503
Abstract :
This paper presents a dynamic predistorter (PD), which linearizes the dynamic AM-AM and AM-PM of a wideband code division multiple access handset power amplifier (PA). The dynamic PD allows an adjacent channel leakage power ratio (ACPR) improvement of 15.7 dB, which is superior to conventional PDs that linearize static AM-AM and AM-PM. The dynamic PD was designed using an HBT generating nonlinearity, a short circuit at the baseband (les4 MHz), and a load circuit for the HBT at the RF fundamental band (ap1.95 GHz). Volterra-series analysis was performed to understand the mechanism of the dynamic PD. The analysis revealed that the short circuit at the baseband enabled the dynamic PD generating third-order intermodulation distortion (IMD3) with opposite phase to the fundamental tone (i.e., antiphase IMD3). The antiphase IMD3 allows dynamic gain compression, which linearizes the dynamic gain expansion of a PA with low quiescent current. The analysis also revealed that the IMD3 amplitude of the dynamic PD can be adjusted by load impedance at the RF fundamental band, which enables the gradient of dynamic AM-AM and AM-PM to be optimized to linearize the PA. The fabricated two-stage InGaP/GaAs HBT PA module with the dynamic PD exhibited an ACPR of -40 dBc and a power-added efficiency of 50% at an average output power of 26.8 dBm with a quiescent current of 20 mA
Keywords :
III-V semiconductors; Volterra series; bipolar integrated circuits; code division multiple access; gallium arsenide; gallium compounds; indium compounds; power amplifiers; 20 mA; HBT power amplifier module; InGaP-GaAs; Volterra-series analysis; WCDMA handset power amplifiers; adjacent channel leakage power ratio; dynamic gain compression; dynamic predistorter; load impedance; nonlinear distortion; quiescent current; third-order intermodulation distortion; wideband code division multiple access; Baseband; Broadband amplifiers; Circuits; Heterojunction bipolar transistors; Intermodulation distortion; Multiaccess communication; Performance analysis; Power amplifiers; Radio frequency; Telephone sets; Adjacent channel leakage power ratio (ACPR); intermodulation distortion (IMD); linearization; nonlinear distortion; power amplifiers (PAs); predistorter (PD);
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2006.890515
Filename :
4118419
Link To Document :
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