Title :
Dynamic characteristics of high speed p-substrate GaInAsP buried crescent lasers
Author :
Ng, W.W. ; Craig, R. ; Yen, H.W.
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
fDate :
3/1/1989 12:00:00 AM
Abstract :
A detailed behavior of 1.3- mu m GaInAsP p-substrate buried-crescent lasers emitting maximum output powers of more than 30 mW/facet is discussed. A 3-dB modulation bandwidth of 11.5 GHz, and relative intensity noise level of approximately -145 dB/Hz were observed at 5 I/sub th/. The two-tone intermodulation distortion was more than 30 dB below the 9-GHz subcarriers for a current modulation index of approximately 40%.<>
Keywords :
III-V semiconductors; gallium compounds; indium compounds; semiconductor junction lasers; 1.3 micron; 11.5 GHz; 30 mW; GaInAsP; III-V semiconductors; high speed p-substrate GaInAsP buried crescent lasers; two-tone intermodulation distortion; Bandwidth; Frequency; Laser modes; Laser noise; Laser radar; Masers; Optical fibers; Power generation; Power lasers; Semiconductor lasers;
Journal_Title :
Lightwave Technology, Journal of
