Title :
A 512 K-bit magneto resistive memory with switched capacitor self-referencing sensing
Author :
Ranmuthu, I.W. ; Ranmuthu, K.T.M. ; Kohl, C. ; Comstock, C.S. ; Hassoun, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Iowa State Univ., Ames, IA, USA
fDate :
8/1/1992 12:00:00 AM
Abstract :
A 512 K-bit nonvolatile magnetoresistive memory with a switched-capacitor self-referencing sensing scheme is reported. This memory is economical since it requires only one mask beyond a typical CMOS process and has rad hard, scalable, and no wear-out properties. This memory has a cell size of 2.0 μm×10 μm, logic buried under its cells, and a 0.3 cm2 die. It is useful for disk caches and for replacing plated wire memories in aerospace applications
Keywords :
CMOS integrated circuits; integrated memory circuits; magnetoresistive devices; radiation hardening (electronics); switched capacitor networks; 512 kbit; CMOS process; SC sensing; aerospace applications; buried logic; disk caches; nonvolatile magnetoresistive memory; self-referencing sensing; switched capacitor; CMOS process; Capacitors; Electric resistance; Magnetic fields; Magnetic films; Magnetic multilayers; Magnetic semiconductors; Magnetic switching; Nonvolatile memory; Voltage;
Journal_Title :
Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on
