• DocumentCode
    1198750
  • Title

    Ultra-compact 350 GHz gain-bandwidth product 40 Gbit/s predriver IC in SiGe bipolar technology

  • Author

    Schick, C. ; Weiß, H. ; Hernandez-Guillén, F. ; Trasser, A. ; Schumacher, H.

  • Author_Institution
    Dept. of Electron Devices & Circuits, Univ. of Ulm, Germany
  • Volume
    41
  • Issue
    20
  • fYear
    2005
  • Firstpage
    1116
  • Lastpage
    1118
  • Abstract
    An ultra-compact 0.36 mm2 differential wideband amplifier fabricated using SiGe technology is presented. Measurements show an on-wafer gain of 20.8 dB and a 3 dB cutoff frequency of 32.0 GHz. The mounted amplifier´s gain is 19.5 dB. The circuit is intended to operate as a predriver in a 40 Gbit/s fibre-optic communication system.
  • Keywords
    Ge-Si alloys; bipolar analogue integrated circuits; differential amplifiers; driver circuits; millimetre wave amplifiers; millimetre wave integrated circuits; optical fibre communication; wideband amplifiers; 19.5 dB; 20.8 dB; 32.0 GHz; 350 GHz; 40 Gbit/s; SiGe; SiGe bipolar technology; amplifier gain; cut-off frequency; differential wideband amplifier; fibre-optic communication system; on-wafer gain; ultra-compact predriver integrated circuit;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20052720
  • Filename
    1522159
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1198750