DocumentCode
1198788
Title
High performance laser with nanopatterned active layer by selective area epitaxy
Author
Elarde, V.C. ; Bryce, A.C. ; Coleman, J.J.
Author_Institution
Micro & Nanotechnology Lab., Univ. of Illinois, Urbana, IL, USA
Volume
41
Issue
20
fYear
2005
Firstpage
1122
Lastpage
1124
Abstract
Lasers containing a nanopatterned active layer demonstrating excellent threshold characteristics are presented. The nanopatterned active layer is fabricated using high-resolution electron beam lithography and selective-area metal organic chemical vapour deposition crystal growth. Results demonstrating an order of magnitude improvement over previous results are reported.
Keywords
MOCVD; electron beam lithography; nanopatterning; quantum dot lasers; semiconductor epitaxial layers; MOCVD; crystal growth; electron beam lithography; high performance laser; metal organic chemical vapour deposition; nanopatterned active layer; quantum dot lasers; selective area epitaxy; threshold characteristics;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20052936
Filename
1522163
Link To Document