A new GaAs technology for stable FETs at 300 degrees C

Author

Fricke, K. ; Hartnagel, Hans L. ; Schütz, R. ; Schweeger, G. ; Würfl, J.

Author_Institution

Inst. fuer Hochfrequenztech., Tech. Hochschule Darmstadt, West Germany

Volume

10

Issue

12

fYear

1989

Firstpage

577

Lastpage

579

Abstract

A technology for the fabrication of GaAs devices for operation at 300 degrees C is presented. The high reliability of the devices is mainly due to diffusion barrier of WSi/sub 2/ in the ohmic contacts and to an optimized Si/sub 3/N/sub 4/ passivation. It is shown that MESFETs produced with this technology demonstrate a remarkable stability of their characteristics, even after 100 h of storage at 300 degrees C, and only a little degradation after 100 h at 400 degrees C.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ohmic contacts; passivation; semiconductor technology; silicon compounds; tungsten compounds; 100 h; 1000 h; 300 C; 400 C; GaAs technology; MESFETs; Si/sub 3/N/sub 4/ passivation; WSi/sub 2/ diffusion barriers; fabrication; high temperature electronics; ohmic contacts; operation at 300 degrees C; reliability; semiconductors; silicides; stability; FETs; Gallium arsenide; Gold; MESFETs; Microwave devices; Ohmic contacts; Passivation; Silicon carbide; Stability; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.43145

Filename

43145