Title :
Monolithic integration of poly-SiGe:H pin diode with WO3 electrochromic film for opto-switching applications
Author :
Ho, J.-J. ; Chen, C.Y.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Ocean Univ., Keelung, Taiwan
Abstract :
A new optoelectronic integrated circuit (OEIC) with high opto-switching photocurrent has been developed by using the structure integrated by a poly-SiGe:H alloy pin and tungsten trioxide (WO3) electro-chromic device. This colour change will degrade the absorption of light with wavelength larger than blue colour. Under 100 μW IR-LED incident (with peak wave length at 750 nm) and at 5 V biased voltage, the optical density change (ΔOD), colouration efficiency (in cm2/C), and the response time (in μs) of the pin-poly-SiGe:H/WO3 opto-switching sensor will be improved dramatically by 340%, sixfold, and 170%, respectively, compared with the traditional pin-SiGe:H and WO3 film by oxygen deficiency and polycrystalline stoichiometry. These IR-sensing trials demonstrated again that the proposed poly-SiGe:H pin electrochromic technology has very useful application in the switching OEIC field of low cost and resource conservation.
Keywords :
Ge-Si alloys; electrochromic devices; hydrogen; infrared detectors; integrated optoelectronics; light absorption; light emitting diodes; p-i-n diodes; photoconductivity; tungsten compounds; 5 V; 750 nm; IR-LED; OEIC; SiGe:H-WO3; blue colour; colour change; colouration efficiency; electrochromic film; electrochromic technology; light absorption; optical density change; opto-switching photocurrent; opto-switching sensor; optoelectronic integrated circuit; oxygen deficiency; poly-SiGe:H alloy pin diode; polycrystalline stoichiometry; tungsten trioxide electrochromic device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20051095
