Title :
Velocity overshoot in ultra-short-gate-length GaAs MESFETs
Author :
Bernstein, Gary ; Ferry, David K.
Author_Institution :
Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA
fDate :
7/1/1988 12:00:00 AM
Abstract :
GaAs MESFETs with ultrashort gates between 0.035 and 0.065 μm were fabricated to determine trends in their DC transconductance as a function of gate length. It is found that overshoot in the channel causes a considerable increase in the average electron velocity. An approximation based on the gradual channel approximation becomes valid at ultrashort gate lengths due to an increased percentage of the channel that is velocity-saturated
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; 35 to 65 nm; DC transconductance; GaAs; GaAs MESFETs; average electron velocity; gradual channel approximation; semiconductors; ultrashort gates; velocity overshoot; velocity-saturated; Electrons; Fabrication; Frequency; Gallium arsenide; Integrated circuit noise; MESFETs; Microwave devices; Noise figure; Solid state circuits; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
