DocumentCode :
1199146
Title :
Fast and sensitive electret polymer characterization by extended floating gate MOSFET
Author :
Kim, Myongseob ; Shen, Nick Yu-Min ; Lee, Chungho ; Kan, Edwin Chihchuan
Author_Institution :
Sch. of Electr. & Comput. Sci., Cornell Univ., Ithaca, NY, USA
Volume :
12
Issue :
5
fYear :
2005
Firstpage :
1082
Lastpage :
1087
Abstract :
A new characterization method for charge conditions in electret polymer films is proposed. This method uses the change of the threshold voltage in an EEPROM (electrically erasable and programmable read-only memory) device to evaluate the effective charge density in electret. The EEPROM device has an extended floating gate that is capacitively coupled to a sensing gate in direct contact with the electret polymer film. It also has a control gate similar to that in the conventional EEPROM device driven by test signals. By the total capacitive loads and effective charges seen on the floating gate, the surface potential of the transistor channel in the subthreshold region is a linear function of effective electret charge density. Representative measurements with several electret charging conditions, such as photo poling and mechano poling are provided. With the bandwidth of the EEPROM device typically much higher than 1 kHz, real-time charging characteristics with sub-millisecond resolution can be obtained.
Keywords :
EPROM; MOSFET; electrets; polarisation; polymer films; surface potential; EEPROM; capacitive coupling; charge density; electret polymer characterization; electret polymer film; electrically erasable and programmable read-only memory; extended floating gate MOSFET; mechano poling; photo poling; polarisation; real-time charging; sensing gate; sub-millisecond resolution; surface potential; threshold voltage; transistor channel; Contacts; EPROM; Electrets; MOSFET circuits; Nonvolatile memory; PROM; Polymer films; Surface charging; Testing; Threshold voltage;
fLanguage :
English
Journal_Title :
Dielectrics and Electrical Insulation, IEEE Transactions on
Publisher :
ieee
ISSN :
1070-9878
Type :
jour
DOI :
10.1109/TDEI.2005.1522200
Filename :
1522200
Link To Document :
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