A nonvolatile programmable solid-electrolyte nanometer switch

Author

Kaeriyama, Shunichi ; Sakamoto, Toshitsugu ; Sunamura, Hiroshi ; Mizuno, Masayuki ; Kawaura, Hisao ; Hasegawa, Tsuyoshi ; Terabe, Kazuya ; Nakayama, Tomonobu ; Aono, Masakazu

Author_Institution

Syst. Devices Res. Labs., NEC Corp., Kanagawa, Japan

Volume

40

Issue

1

fYear

2005

Firstpage

168

Lastpage

176

Abstract

A reconfigurable LSI employing a nonvolatile nanometer-scale switch, NanoBridge, is proposed, and its basic operations are demonstrated. The switch, composed of solid electrolyte copper sulfide, has a <30-nm contact diameter and <100-Ω on-resistance. Because of its small size, it can be used to create extremely dense field-programmable logic arrays. A 4 × 4 crossbar switch and a 2-input look-up-table circuit are fabricated with 0.18-μm CMOS technology, and operational tests with them have confirmed the switch´s potential for use in programmable logic arrays. A 1-kb nonvolatile memory is also presented, and its potential for use as a low-voltage memory device is demonstrated.

Keywords

CMOS logic circuits; field programmable gate arrays; large scale integration; nanoelectronics; random-access storage; solid electrolytes; switches; table lookup; 0.18 micron; 1 kbyte; CMOS technology; NanoBridge; crossbar switch; field-programmable logic arrays; look-up-table circuit; low-voltage memory device; nonvolatile memory; nonvolatile programmable solid-electrolyte nanometer switch; reconfigurable LSI; solid electrolyte copper sulfide; CMOS logic circuits; CMOS technology; Circuit testing; Large scale integration; Logic arrays; Logic testing; Nonvolatile memory; Programmable logic arrays; Switches; Switching circuits; Crossbar switch; FPGA; nonvolatile memory; reconfigurable logic; solid electrolyte switch;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2004.837244

Filename

1375000