Title :
Fabrication and Characterization of an Enhancement-Mode Planar Resonant Tunneling Transistor
Author :
Son, SeungHun ; Hwang, Sungwoo ; Ahn, Doyeol ; Lee, JungIll ; Park, YoungJu ; Yu, YunSeop
Author_Institution :
Memory Div., Samsung Electron. Co., Suwon, South Korea
Abstract :
We report the fabrication and characterization of a planar resonant tunneling transistor (PRTT) using a GaAs/AlGaAs heterostructure wafer. Our PRTT operates as an enhancement-mode device, and shows the negative differential resistance (NDR) modulated with the gate bias in an extremely wide range (from the fully depleted dot to the dot in a single-electron transistor regime). This NDR spectrum represents a full, gate-bias-modulated evolution of the 0-D states in a quantum dot. Our data are also consistent with the ground (E 1) and the first excited state (E 2) of the Fock-Darwin states.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; resonant tunnelling transistors; semiconductor heterojunctions; semiconductor quantum dots; single electron transistors; Fock-Darwin states; GaAs-AlGaAs; dot in a single-electron transistor; enhancement-mode device; first excited state; fully depleted dot; gate bias; ground state; mode planar resonant tunneling transistor; negative differential resistance modulation; quantum dot; semiconductor heterostructure wafer; Enhancement mode; Fock–Darwin states; in-plane gates (IPGs); resonant tunneling;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2009.2018109
