Title :
A cost-efficient high-performance dynamic TCAM with pipelined hierarchical searching and shift redundancy architecture
Author :
Noda, Hideyuki ; Inoue, Kazunari ; Kuroiwa, Masayuki ; Igaue, Futoshi ; Yamamoto, Kouji ; Mattausch, Hans Jürgen ; Koide, Tetsushi ; Amo, Atsushi ; Hachisuka, Atsushi ; Soeda, Shinya ; Hayashi, Isamu ; Morishita, Fukashi ; Dosaka, Katsumi ; Arimoto, Kazut
Author_Institution :
Renesas Technol. Corp., Hyogo, Japan
Abstract :
This paper describes a 4.5-Mb dynamic ternary CAM (DTCAM) which is suitable for networking applications. A dynamic TCAM cell structure in 130-nm embedded DRAM technology is used to realize the small cell size of 3.59 μm2. In addition, a novel array architecture of TCAM, the pipelined hierarchical searching (PHS) architecture, is proposed. The PHS architecture is found to be suitable for realizing small area penalty, high-throughput searching and low-voltage operation simultaneously. With the combination of the DTCAM cell and the PHS architecture, small silicon area of 32 mm2 for a fabricated 4.5-Mb DTCAM chip, high performance of 143 M searches per second and low power dissipation of 1.1 W have been achieved. To improve the yield of TCAMs, a novel shift redundancy technique is applied and estimated to result in 3.6-times yield improvement. These techniques and architectures described in this report are attractive for realizing cost-efficient, large-scale, high-performance TCAM chips.
Keywords :
CMOS memory circuits; DRAM chips; content-addressable storage; embedded systems; integrated circuit design; memory architecture; pipeline arithmetic; 1.1 W; 130 nm; 4.5 MB; CMOS memory integrated circuits; dynamic TCAM; embedded DRAM; networking applications; pipelined hierarchical searching; shift redundancy architecture; shift redundancy technique; ternary content addressable memory; CADCAM; Computer aided manufacturing; Costs; Integrated circuit yield; Large-scale systems; Power dissipation; Random access memory; Redundancy; Silicon; Yield estimation; CMOS memory integrated circuits; embedded DRAM; network; ternary CAM;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2004.838016