A 0.9-V 1T1C SBT-based embedded nonvolatile FeRAM with a reference voltage scheme and multilayer shielded bit-line structure

Author

Yamaoka, Kunisato ; Iwanari, Shunichi ; Murakuki, Yasuo ; Hirano, Hiroshige ; Sakagami, Masahiko ; Nakakuma, Tetsuji ; Miki, Takashi ; Gohou, Yasushi

Author_Institution

Matsushita Electr. Ind. Co. Ltd., Kyoto, Japan

Volume

40

Issue

1

fYear

2005

Firstpage

286

Lastpage

292

Abstract

A one-transistor one-capacitor (1T1C) SBT-based embedded nonvolatile FeRAM, which operates at a low voltage of 0.9 V even after 10 years of imprint degradation, was fabricated using a 0.18-μm process. The low voltage operation and high reliability characteristics have been achieved using a novel reference voltage scheme and a multilayer shielded bit-line structure.

Keywords

embedded systems; ferroelectric storage; low-power electronics; random-access storage; reference circuits; 0.18 micron; 0.9 V; 1T1C SBT-based embedded nonvolatile FeRAM; ferroelectric memory; multilayer shielded bit-line structure; nonvolatile memory; one-transistor one-capacitor FeRAM; reference voltage scheme; Capacitors; Degradation; EPROM; Ferroelectric films; Ferroelectric materials; Hysteresis; Low voltage; Nonhomogeneous media; Nonvolatile memory; Random access memory; Ferroelectric; imprint; memory; nonvolatile; one-transistor one-capacitor (1T1C); reference voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2004.837967

Filename

1375012