Title :
Strain Sensitivity of MOSFET Devices
Author :
Morten, B. ; Canali, C. ; Ferla, G. ; Taroni, A.
Abstract :
In this paper experimental results are presented on deformation effects in silicon MOSFET devices for temperatures ranging from -20 to 100°C. The high sensitivity and the low temperature dependence of the electrical characteristics are discussed in view the use of these devices in pressure transducers.
Keywords :
Capacitive sensors; Irrigation; MOSFET circuits; Piezoresistance; Pressure measurement; Semiconductor materials; Silicon; Temperature dependence; Temperature sensors; Voltage;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
DOI :
10.1109/TIM.1977.4314594
