• DocumentCode
    1199732
  • Title

    Strain Sensitivity of MOSFET Devices

  • Author

    Morten, B. ; Canali, C. ; Ferla, G. ; Taroni, A.

  • Volume
    26
  • Issue
    4
  • fYear
    1977
  • Firstpage
    424
  • Lastpage
    425
  • Abstract
    In this paper experimental results are presented on deformation effects in silicon MOSFET devices for temperatures ranging from -20 to 100°C. The high sensitivity and the low temperature dependence of the electrical characteristics are discussed in view the use of these devices in pressure transducers.
  • Keywords
    Capacitive sensors; Irrigation; MOSFET circuits; Piezoresistance; Pressure measurement; Semiconductor materials; Silicon; Temperature dependence; Temperature sensors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Instrumentation and Measurement, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9456
  • Type

    jour

  • DOI
    10.1109/TIM.1977.4314594
  • Filename
    4314594
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1199732