Tunable GaInNAs lasers with photonic crystal mirrors

Author

Scherer, Helmut ; Gollub, Dirk ; Kamp, Martin ; Forchel, Alfred

Author_Institution

Dept. of Tech. Phys., Univ. of Wurzburg, Wuerzburg, Germany

Volume

17

Issue

11

fYear

2005

Firstpage

2247

Lastpage

2249

Abstract

We present results of tunable GaInNAs lasers with photonic crystal (PhQ mirrors, fabricated from GaAs-AlGaAs layers with a double GaInNAs quantum well emitting at IR wavelength. The devices are realized as ridge waveguide lasers with two coupled segments and a total length between 240 and 580 pm. PhC blocks with different thicknesses are used for the back and front mirror as well as for the intermediate reflector between the two segments. The lasers have threshold currents around 20 mA and output powers up to 6 mW. Tuning of the laser emission over 30 nm is achieved by a variation of the currents injected into the two segments.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser mirrors; laser tuning; photonic crystals; quantum well lasers; semiconductor epitaxial layers; stimulated emission; waveguide lasers; 1.3 mum; 20 mA; 240 to 580 mum; 6 mW; GaAs-AlGaAs layers; GaInNAs; GaInNAs lasers; back mirror; double GaInNAs quantum well; front mirror; laser emission; laser tuning; photonic crystal mirrors; ridge waveguide lasers; tunable lasers; Laser tuning; Mirrors; Optical coupling; Photonic crystals; Power generation; Power lasers; Quantum well lasers; Threshold current; Tunable circuits and devices; Waveguide lasers; Continuous-wave lasers; gallium compounds; metropolitan area networks.; optical communication;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.857989

Filename

1522282