Title :
Small-signal modulation characteristics of p-doped 1.1- and 1.3-μm quantum-dot lasers
Author :
Fathpour, S. ; Mi, Z. ; Bhattacharya, Pallab
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
We have investigated the small-signal modulation characteristics of 1.1and 1.3-μm p-doped quantum-dot lasers in order to evaluate the potential of acceptor doping. The maximum measured 3-dB bandwidth of the 1.1- and 1.3-μm lasers are 11 and 8 GHz, respectively, which are only marginally higher than those in the corresponding undoped devices.
Keywords :
optical modulation; quantum dot lasers; semiconductor doping; 1.1 mum; 1.3 mum; 11 GHz; 8 GHz; acceptor doping; p-doped lasers; quantum-dot lasers; small-signal modulation; Bandwidth; Doping; Electrons; Laser theory; Molecular beam epitaxial growth; Quantum dot lasers; Quantum dots; Stationary state; Temperature; Threshold current; Characteristics temperature; modulation bandwidth; p-doping; quantum-dot (QD) laser; threshold current; tunneling injection;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.857242
