Title :
Low temperature crystal growth of MnBi films
Author :
Nakada, Masafumi ; Okada, Mitsuya
Author_Institution :
Functional Devices Res. Labs., NEC Corp., Kawasaki, Japan
fDate :
11/1/1994 12:00:00 AM
Abstract :
The relation between deposition conditions of Bi and Mn layers and crystal growth of MnBi were investigated to reduce the MnBi annealing temperature for its application to a magneto-optical disk. We found that higher c-axis orientation of the hexagonal Bi layer and lower Mn oxide concentration in the Mn layer reduces the annealing temperature. Growth of MnBi below 150°C, which is much lower than the decomposition temperature of photo-polymer (about 200°C), was achieved by optimizing deposition conditions of Bi and Mn layers
Keywords :
annealing; bismuth; bismuth alloys; crystal growth; magnetic thin films; manganese; manganese alloys; 150 to 200 C; Mn layer; Mn oxide concentration; Mn-Bi; MnBi; MnBi annealing temperature; MnBi films; annealing temperature; c-axis orientation; decomposition temperature; deposition conditions; hexagonal Bi layer; low temperature crystal growth; magneto-optical disk; photo-polymer; Annealing; Bismuth; Glass; Magnetic anisotropy; Magnetic films; Optical films; Perpendicular magnetic anisotropy; Substrates; Temperature; X-ray diffraction;
Journal_Title :
Magnetics, IEEE Transactions on
