Electrically pumped InGaAsP-InP microring optical amplifiers and lasers with surface passivation

Author

Amarnath, Kuldeep ; Grover, Rohit ; Kanakaraju, Subramanian ; Ho, Ping-Tong

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of Maryland, College Park, MD, USA

Volume

17

Issue

11

fYear

2005

Firstpage

2280

Lastpage

2282

Abstract

Vertically coupled electrically pumped InGaAsP microring optical amplifiers providing gain at 1550 nm are demonstrated. The microrings provide up to 10 dB of gain at the through-port in pulsed mode. The bias current is used to control the loss in the ring and, hence, the region of operation (under-coupled, critically coupled, transparency, and gain). Sulfur passivation is used to reduce carrier loss due to surface recombination in the active region. The amplifiers are designed for application in cascaded microring optical logic gates in photonic logic circuits.

Keywords

III-V semiconductors; electron beam pumping; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser cavity resonators; laser modes; micro-optics; optical logic; optical losses; passivation; ring lasers; semiconductor optical amplifiers; surface treatment; 10 dB; 1550 nm; InGaAsP-InP; InGaAsP-InP lasers; InGaAsP-InP optical amplifiers; carrier loss; electrical pumping; microring lasers; microring optical amplifiers; optical logic gates; photonic logic circuits; pulsed mode laser; sulfur passivation; surface passivation; surface recombination; vertically coupled optical amplifiers; Laser excitation; Optical amplifiers; Optical losses; Optical pumping; Passivation; Pulse amplifiers; Pump lasers; Semiconductor optical amplifiers; Stimulated emission; Surface emitting lasers; InGaAsP; microresonator; microring; optical amplifier; optical laser; optical logic; passivation; photonic logic; surface recombination;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.857596

Filename

1522293