Title :
Continuous-wave operation of GaInAs-AlGaAsSb quantum cascade lasers
Author :
Yang, Q. ; Bronner, W. ; Manz, C. ; Moritz, R. ; Mann, Ch. ; Kaufel, G. ; Kohler, K. ; Wagner, J.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
Abstract :
We report on the demonstration of continuous-wave (CW) operation of GaInAs-AlGaAsSb quantum cascade (QC) lasers. By placing a 2.5-μm-thick gold layer on both sides of the laser ridge to extract heat from the active region in the lateral direction, together with mounting the device epilayer down, we have achieved CW operation of GaInAs-AlGaAsSb QC lasers composed of 25 stages of active/injection regions. The maximum CW operating temperature of the lasers is 94 K, and the emission wavelength is around /spl lambda//spl sim/4.65 μm. For a device with the size of 10×2000 μm2, the CW optical output power per facet is 13 mW at 42 K and 4 mW at 94 K. The CW threshold current density is 1.99 kA/cm2 at 42 K, and 2.08 kA/cm2 at 94 K, respectively.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; gold; indium compounds; quantum cascade lasers; semiconductor epitaxial layers; stimulated emission; 10 mum; 13 mW; 2.5 mum; 2000 mum; 4 mW; 4.65 mum; 42 K; 94 K; GaInAs-AlGaAsSb lasers; GaInAs-AlGaAsSb-Au; active-injection regions; continuous-wave operation; device epilayer mounting; laser emission wavelength; laser ridge; quantum cascade lasers; threshold current density; Conducting materials; Electrons; Epitaxial growth; Gold; Optical design; Optical materials; Potential well; Quantum cascade lasers; Tunneling; X-ray lasers; Continuous wave (CW); GaInAs–AlGaAsSb; mid-infrared; quantum cascade (QC) lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.857588
