DocumentCode :
1200155
Title :
Three-dimensional resist process simulator PEACE (photo and electron beam lithography analyzing computer engineering system)
Author :
Hirai, Yoshihiko ; Tomida, Sadafumi ; Ikeda, Kazushi ; Sasago, Masaru ; Endo, Masayki ; Hayama, Sigeru ; Nomura, Noboru
Author_Institution :
Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Volume :
10
Issue :
6
fYear :
1991
fDate :
6/1/1991 12:00:00 AM
Firstpage :
802
Lastpage :
807
Abstract :
A three-dimensional topographical simulator PEACE (photo and electron beam lithography analyzing computer engineering system) is discussed. One of the difficulties in resist topographical simulation exists due to the three-dimensional resist development algorithm. An algorithm based on the cell removal model provides accurate and stable results for the three-dimensional resist development process. The program has been adapted to a supercomputer for quick computation. The simulator can successfully perform the three-dimensional development in an absolutely stable manner, and good agreement can be obtained with experiments for both photo and electron beam lithography
Keywords :
digital simulation; electron beam lithography; electronic engineering computing; photolithography; 3D simulation; PEACE; analyzing computer engineering system; cell removal model; electron beam lithography; resist process simulator; supercomputer; three-dimensional topographical simulator; Analytical models; Computational modeling; Computer simulation; Electron beams; Lithography; Optical device fabrication; Optical diffraction; Resists; Supercomputers; Systems engineering and theory;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/43.137508
Filename :
137508
Link To Document :
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