DocumentCode :
1200239
Title :
Low energy ion bombardment and surface spin pinning in yttrium iron garnet films
Author :
Chernakova, A.K. ; Stancil, Daniel D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
Volume :
30
Issue :
6
fYear :
1994
fDate :
11/1/1994 12:00:00 AM
Firstpage :
4530
Lastpage :
4532
Abstract :
Surface spin pinning and physical and chemical changes on the surface of yttrium iron garnet crystalline films were investigated. The magnetic properties of these films as determined by magnetostatic surface waves and ferromagnetic resonance measurements were studied as functions of Ar ion energy Ei=200-1000 eV and ion dose Di=1014-1018 ions/cm2. The surface spin pinning appears in a mildly damaged, non-stoichiometric layer with oxygen depletion. An alternative mechanism for the surface spin pinning effect based on an anisotropy associated with the oxygen vacancies and iron ion valence changes is proposed
Keywords :
ferromagnetic resonance; garnets; ion beam effects; magnetic thin films; magnetostatic surface waves; vacancies (crystal); yttrium compounds; 200 to 1000 eV; O vacancies; YFe5O12; YIG; anisotropy; ferromagnetic resonance; garnet films; low energy ion bombardment; magnetostatic surface waves; nonstoichiometric layer; surface spin pinning; Chemicals; Crystallization; Garnet films; Iron; Magnetic anisotropy; Magnetic films; Magnetic properties; Magnetic resonance; Perpendicular magnetic anisotropy; Yttrium;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.334138
Filename :
334138
Link To Document :
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