DocumentCode :
1200610
Title :
Application of the cavity model to lossy power-return plane structures in printed circuit boards
Author :
Xu, Minjia ; Wang, Hao ; Hubing, Todd H.
Author_Institution :
Hewlett-Packard, San Diego, CA, USA
Volume :
26
Issue :
1
fYear :
2003
Firstpage :
73
Lastpage :
80
Abstract :
Power-return plane pairs in printed circuit boards are often modeled as resonant cavities. Cavity models can be used to calculate transfer impedance parameters used to predict levels of power bus noise. Techniques for applying the cavity model to lossy printed circuit board geometries rely on a low-loss assumption in their derivations. Boards that have been designed to damp power bus resonances (e.g., boards with embedded capacitance) generally violate this low-loss assumption. This paper investigates the validity of the cavity model when applied to printed circuit board structures where the board resonances are significantly damped. Cavity modeling results for sample lossy power-return plane structures are validated using a three-dimensional full wave numerical code. A simple method is also established to check the validity of the cavity model for a power-return plane structure with imperfect conductors and lossy dielectric substrates.
Keywords :
capacitance; cavity resonators; dielectric losses; equivalent circuits; modelling; printed circuits; surface impedance; 3D full wave numerical code; cavity model; conductive loss; damped board resonances; dielectric loss; embedded capacitance; imperfect conductors; lossy PCB geometries; lossy dielectric substrates; lossy power-return plane structures; model validation; power bus impedance; power bus modeling; power bus noise; power bus resonances; printed circuit boards; propagation constant; resonant cavities; transfer impedance parameters; Capacitance; Circuit noise; Conductors; Geometry; Impedance; Noise level; Predictive models; Printed circuits; Resonance; Solid modeling;
fLanguage :
English
Journal_Title :
Advanced Packaging, IEEE Transactions on
Publisher :
ieee
ISSN :
1521-3323
Type :
jour
DOI :
10.1109/TADVP.2003.811552
Filename :
1198945
Link To Document :
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