Focused-ion-beam fuse cutting for redundancy technology

Author

Komano, Haruki ; Ohmura, Yamichi ; Takigawa, Tadahiro

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

35

Issue

7

fYear

1988

fDate

7/1/1988 12:00:00 AM

Firstpage

899

Lastpage

903

Abstract

Fuse cutting with focused ion beams to activate redundancy circuits is proposed, and experiments are reported that verify its potential usefulness. Aluminum fuses covered with a thin passivation layer, which are difficult to cut by conventional laser-beam technology due to the material´s high reflectivity, were cut in 5 s. Ga ion beams with 30-kV acceleration voltage, 0.8-μm beam diameter, and 0.3-A/cm ² current density were used. No change in device properties due to focused-ion-beam irradiation was observed unless the focused ion beams were incident directly on the device. It is concluded that the focused-ion-beam programming technique will be useful for redundancy circuit programming

Keywords

PLD programming; aluminium; gallium; integrated circuit technology; ion beam applications; redundancy; 30 kV; 5 s; 800 nm; Al fuses; FIB; Ga ion beams; acceleration voltage; activate redundancy circuits; beam diameter; current density; focused ion beams; focused-ion-beam programming technique; fuse cutting; redundancy circuit programming; redundancy technology; thin passivation layer; Acceleration; Aluminum; Circuits; Fuses; Ion beams; Laser beam cutting; Particle beams; Passivation; Reflectivity; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.3342

Filename

3342