Survey on flash technology with specific attention to the critical process parameters related to manufacturing

Author

Ginami, Giancarlo ; Canali, Danilo ; Fattori, Davide ; Girardi, Giuliana ; Scintu, Petronilla ; Tarchini, Laura ; Tricarico, Domenica

Author_Institution

Central Res. & Dev. Dept., STMicroelectronics, Agrate Brianza, Italy

Volume

91

Issue

4

fYear

2003

fDate

4/1/2003 12:00:00 AM

Firstpage

503

Lastpage

522

Abstract

In this paper, the history of flash processes will be presented, starting with the 1.2-μm technology to the most current technology. The front- and back-end process modules will be reviewed taking into account the main impact on cell functionality and reliability. In particular, the lithographic and mask issues, the diffusion and cleaning process steps, the chemical mechanical planarization technique to improve planarization, and the high-energy and large-tilted implant will be covered. Finally, the process and equipment trends for the next-generation flash technology will be presented.

Keywords

CMOS memory circuits; chemical mechanical polishing; flash memories; integrated circuit manufacture; integrated circuit reliability; integrated circuit technology; ion implantation; photolithography; sputter etching; surface cleaning; 1.2 micron; CMOS transistor scaling; back-end process modules; cell functionality; cell reliability; chemical mechanical planarization technique; cleaning process steps; critical process parameters; diffusion; flash technology; front-end process modules; high-energy large-tilted implant; history; lithographic issues; manufacturing; mask issues; next-generation flash technology; CMOS technology; Flash memory; Irrigation; Manufacturing processes; Nonvolatile memory; Planarization; Production; Pulp manufacturing; Random access memory; Transistors;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/JPROC.2003.811703

Filename

1199080