DocumentCode :
1201087
Title :
Analytic transient solution of general MOS circuit primitives
Author :
Shih, Yung-Ho ; Kang, Sung-Mo
Author_Institution :
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
Volume :
11
Issue :
6
fYear :
1992
fDate :
6/1/1992 12:00:00 AM
Firstpage :
719
Lastpage :
731
Abstract :
The exact analytic transient solution is presented for a general MOS circuit primitive. In the circuit primitive, I-V characteristics of transistors are modeled by quadratic equations and node voltages by piecewise-linear waveforms. The proposed MOS circuit primitive, of which an inverter is a special case, is shown to be more suitable for switch level and fast timing simulations than the commonly used inverter. For circuit simulation of medium-size digital circuits containing a few hundred transistors, the application of this analytic solution has resulted in two to three orders of speed improvement over the conventional circuit simulator. The speed improvement factor is expected to grow with the circuit size. It is also shown that the exact transient solution of a macromodel which models the charge sharing can be obtained in the same way
Keywords :
circuit analysis computing; digital integrated circuits; field effect integrated circuits; I-V characteristics; ILLIADS program; MOS circuit primitives; analytic transient solution; charge sharing; circuit simulator; digital circuits; fast timing simulations; inverter; macromodel; node voltages; piecewise-linear waveforms; quadratic equations; speed improvement factor; switch level simulation; transistors; Circuit simulation; Digital circuits; Equations; Inverters; Piecewise linear techniques; Switches; Switching circuits; Timing; Transient analysis; Voltage;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/43.137517
Filename :
137517
Link To Document :
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