DocumentCode :
1201367
Title :
Forsterite film formation and grain growth in 3% Si steel
Author :
Cunha, Marco A. ; Cesar, G.M.M.
Author_Institution :
Cia Acos Especiais Itabira, Timoteo, Brazil
Volume :
30
Issue :
6
fYear :
1994
fDate :
11/1/1994 12:00:00 AM
Firstpage :
4890
Lastpage :
4892
Abstract :
The forsterite film in 3% Si steel is formed by a solid state reaction of the annealing separator, MgO, with SiO2 that results from the reduction of the fayalite layer in the hydrogen atmosphere in the high temperature anneal. In this work, secondary recrystallization was about complete at 1000°C. After that temperature tertiary recrystallization can occur if the boundary drag of the second phase particles can be overcome. Addition of phosphates to the annealing separator affects the morphology of the forsterite film and can have an important effect on tertiary recrystallization by affecting the rate of decrease of the boundary-drag and/or the surface energy relationship
Keywords :
annealing; ferromagnetic materials; grain growth; iron alloys; magnesium compounds; recrystallisation; silicon alloys; surface energy; 1000 degC; Fe-Si; Fe-Si steel; H2 atmosphere; Mg2SiO4; MgO; SiO2; annealing separator; boundary drag; fayalite layer; forsterite film formation; grain growth; high temperature anneal; morphology; phosphates; second phase particles; secondary recrystallization; solid state reaction; surface energy; tertiary recrystallization; Annealing; Atmosphere; Optical films; Optical microscopy; Particle separators; Scanning electron microscopy; Semiconductor films; Steel; Strips; Temperature;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.334256
Filename :
334256
Link To Document :
بازگشت