DocumentCode :
12017
Title :
Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel
Author :
Dong-Il Moon ; Jee-Yeon Kim ; Joon-Bae Moon ; Dong-Oh Kim ; Yang-Kyu Choi
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Volume :
61
Issue :
1
fYear :
2014
fDate :
Jan. 2014
Firstpage :
60
Lastpage :
65
Abstract :
4F2 multifunctional unified-RAM based on a highly scaled vertical channel is experimentally demonstrated. The high performance and reliable operation of bandgap-engineered nonvolatile memory as well as underlap 1T-DRAM with nonuniform channel doping for a long retention time and endurable operation is presented in a single transistor.
Keywords :
DRAM chips; semiconductor doping; 4F2 multifunctional unified-RAM; BE-SONOS; bandgap-engineered nonvolatile memory; highly scaled vertical channel; nonuniform channel doping; retention time; single transistor; underlap 1T-DRAM; Computer architecture; Doping; Logic gates; Moon; Nonvolatile memory; Silicon; Tunneling; Bandgap engineering; SONOS; capacitorless 1T-DRAM; multifunction; nonvolatile memory; unified-RAM (URAM); vertical channel;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2292316
Filename :
6678770
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=12017
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