Analysis of active matrix GaN-based HFET switch circuits integrated with GaN LED micro-displays

Author

Shih, Ghien An ; Huang, Jian Jang

Author_Institution

Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

26

Issue

11

fYear

2005

Firstpage

808

Lastpage

810

Abstract

We demonstrate a novel GaN-based heterojunction field effect transistor (HFET) active-matrix circuit for an light-emitting diode (LED) microdisplay. Simulation results are shown with basic and improved circuits. Variations of process and material growth conditions are discussed by correlating device parameters with LED flow currents in this circuit. It shows that the HFET-LED control circuit approach provides a stability path to mitigate variations of LED currents during operations.

Keywords

field effect transistor circuits; gallium compounds; high electron mobility transistors; light emitting diodes; microdisplays; wide band gap semiconductors; GaN; GaN LED microdisplay; GaN-based HFET; HFET-LED control circuit; active matrix circuit; heterojunction field effect transistor; light-emitting diode microdisplay; switch circuits; Active matrix technology; FETs; Gallium nitride; HEMTs; Heterojunctions; Light emitting diodes; MODFETs; Microdisplays; Switches; Switching circuits; GaN; heterojunction field effect transistor (HFET); light-emitting diode (LED); microdisplays;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.857721

Filename

1522462