Title :
High-performance dual-gate carbon nanotube FETs with 40-nm gate length
Author :
Yu-Ming Lin ; Appenzeller, J. ; Zhihong Chen ; Zhi-Gang Chen ; Hui-Ming Cheng ; Avouris, P.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We report on a high-performance back-gated carbon nanotube field-effect transistor (CNFET) with a peak transconductance of 12.5 μS and a delay time per unit length of /spl tau//L=19 ps/μm. In order to minimize the parasitic capacitances and optimize the performance of scaled CNFETs, we have utilized a dual-gate design and have fabricated a 40-nm-gate CNFET possessing excellent subthreshold and output characteristics without exhibiting short-channel effects.
Keywords :
carbon nanotubes; field effect transistors; nanoelectronics; nanotube devices; 40 nm; CNFET; carbon nanotube field-effect transistor; delay time; dual-gate carbon nanotube; parasitic capacitance; short-channel effect; transconductance; Acoustic scattering; CNTFETs; Carbon nanotubes; Delay effects; FETs; Optical scattering; Parasitic capacitance; Partial discharges; Temperature measurement; Transconductance; Carbon nanotube (CN); dual gate; field-effect transistor (FET); short-channel effect;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.857704
