Title :
Fast DNBTI components in p-MOSFET with SiON dielectric
Author :
Yang, T. ; Shen, C. ; Li, M.-F. ; Ang, C.H. ; Zhu, C.X. ; Yeo, Y.C. ; Samudra, G. ; Rustagi, Subhash C. ; Yu, M.B. ; Kwong, D.L.
Author_Institution :
Inst. of Microelectron., Singapore, Singapore
Abstract :
For the first time, we perform a systematic investigation of the fast components of dynamic negative biased temperature instability (DNBTI) in p-MOSFET with an ultrathin SiON gate dielectric. Experimental results unambiguously show a fast DNBTI component measured by a recently developed fast measurement method, and this component is due to trapping and detrapping of hole traps Not in SiON. The cumulative degradation increases with increasing stress frequency. Model simulations are in excellent agreement with all experimental data.
Keywords :
MOSFET; dielectric thin films; hole traps; silicon compounds; DNBTI components; SiON; dynamic negative biased temperature instability; hole traps; p-MOSFET; ultrathin SiON gate dielectric; Degradation; Dielectric measurements; MOSFET circuits; Niobium compounds; Pulse measurements; Stress measurement; Thermal stresses; Time measurement; Titanium compounds; Voltage; Dynamic negative biased temperature instability (DNBTI); MOSFETs; SiON;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.857684
