Fast DNBTI components in p-MOSFET with SiON dielectric

Author

Yang, T. ; Shen, C. ; Li, M.-F. ; Ang, C.H. ; Zhu, C.X. ; Yeo, Y.C. ; Samudra, G. ; Rustagi, Subhash C. ; Yu, M.B. ; Kwong, D.L.

Author_Institution

Inst. of Microelectron., Singapore, Singapore

Volume

26

Issue

11

fYear

2005

Firstpage

826

Lastpage

828

Abstract

For the first time, we perform a systematic investigation of the fast components of dynamic negative biased temperature instability (DNBTI) in p-MOSFET with an ultrathin SiON gate dielectric. Experimental results unambiguously show a fast DNBTI component measured by a recently developed fast measurement method, and this component is due to trapping and detrapping of hole traps N_ot in SiON. The cumulative degradation increases with increasing stress frequency. Model simulations are in excellent agreement with all experimental data.

Keywords

MOSFET; dielectric thin films; hole traps; silicon compounds; DNBTI components; SiON; dynamic negative biased temperature instability; hole traps; p-MOSFET; ultrathin SiON gate dielectric; Degradation; Dielectric measurements; MOSFET circuits; Niobium compounds; Pulse measurements; Stress measurement; Thermal stresses; Time measurement; Titanium compounds; Voltage; Dynamic negative biased temperature instability (DNBTI); MOSFETs; SiON;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.857684

Filename

1522468