Experimental study on superior mobility in [110]-oriented UTB SOI pMOSFETs

Author

Tsutsui, Gen ; Saitoh, Masumi ; Hiramoto, Toshiro

Author_Institution

Inst. of Ind. Sci., Univ. of Tokyo, Japan

Volume

26

Issue

11

fYear

2005

Firstpage

836

Lastpage

838

Abstract

The superior mobility in [110]-oriented ultrathin body (UTB) pMOSFETs with silicon-on-insulator (SOI) thickness (t_SOI) ranging from 32 down to 2.3 nm is experimentally examined for the first time. It is shown that the mobility in [110] UTB pMOSFETs, which is much higher than the universal curve in conventional (100) pMOSFETs, is not degraded until t_SOI is thinned to 3 nm. Scattering mechanisms in [110] UTB pMOSFETs are discussed on the basis of the temperature dependence of the mobility. The high mobility in the UTB regime in [110] pMOSFET is attributed to subband modulation by carrier confinement and heavier hole effective mass normal to the channel surface.

Keywords

MOSFET; hole mobility; silicon-on-insulator; UTB SOI pMOSFET; carrier confinement; hole effective mass; hole mobility; quantum confinement effect; scattering mechanism; silicon-on-insulator; subband modulation; temperature dependence; ultrathin body UTB pMOSFET; Carrier confinement; Degradation; Effective mass; Electric variables measurement; Electrical resistance measurement; Fabrication; MOSFETs; Particle scattering; Silicon on insulator technology; Temperature dependence; (110); Hole mobility; quantum confinement effect; subband modulation; ultrathin-body (UTB) SOI MOSFET;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.857725

Filename

1522471