• DocumentCode
    1202080
  • Title

    Vertical-type amorphous-silicon MOSFET ICs

  • Author

    Okada, H. ; Uchida, Yasuo ; Arai, Kazumasa ; Oda, Shunri ; Matsumura, Masakiyo

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
  • Volume
    35
  • Issue
    7
  • fYear
    1988
  • fDate
    7/1/1988 12:00:00 AM
  • Firstpage
    919
  • Lastpage
    922
  • Abstract
    The performance of vertical-type amorphous-silicon (a-Si) MOSFETs has been improved significantly by using native silicon dioxide as the gate insulator. The maximum field-effect mobility was 1.2 cm2/V-s. An E/E-type inverter and a seven-stage ring oscillator have been fabricated by integrating the vertical-type a-Si MOSFET. The minimum propagation delay time was 95 ns/stage. The characteristics of a flip-flop circuit are also described
  • Keywords
    amorphous semiconductors; elemental semiconductors; field effect integrated circuits; integrated circuit technology; integrated logic circuits; invertors; oscillators; silicon; 95 ns; E/E-type inverter; amorphous Si; characteristics; field-effect mobility; flip-flop circuit; gate insulator; native SiO2 gate insulator; performance; propagation delay time; seven-stage ring oscillator; vertical amorphous MOSFET ICs; Chromium; Electrodes; Electrons; FETs; Fabrication; Insulation; Inverters; MOSFET circuits; Oxidation; Silicon compounds;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.3345
  • Filename
    3345
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1202080