DocumentCode
1202203
Title
Very High Speed Static Induction Thyristor
Author
Nakamura, Yoshio ; Tadano, Hiroshi ; Takigawa, Mitsuharu ; Igarashi, Isemi ; Nishizawa, Jun-ichi
Author_Institution
Toyota Central Research and Development Laboratories, Inc., 41-1, Aza Yokomichi, Oaza Nagakute, Nagakute-cho, Aichi-gun, Aichi-ken, 480-11, Japan.
Issue
6
fYear
1986
Firstpage
1000
Lastpage
1006
Abstract
Characteristics of a newly developed static induction thyristor (SIThy) are described. The SIThy is irradiated by 2-MeV protons to improve the switching speed as a result of local carrier lifetime control. The characteristics of the proton irradiated SIThy are controlled by annealing conditions to obtain devices for various applications. The switching speed of the SIThy is very high; for example, at an anode current of 50 A, its rise time, storage time, and fall time are 100 ns, 60 ns, and 50 ns, respectively. Thus the newly developed SIThy is suitable for high-speed switching devices.
Keywords
Anodes; Cathodes; Charge carrier lifetime; Industry Applications Society; Protons; Surface resistance; Switching circuits; Switching loss; Thyristors; Voltage;
fLanguage
English
Journal_Title
Industry Applications, IEEE Transactions on
Publisher
ieee
ISSN
0093-9994
Type
jour
DOI
10.1109/TIA.1986.4504831
Filename
4504831
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