Anomalous reverse short-channel effect in p/sup +/ polysilicon gated P-channel MOSFET

Author

Chang, Chun-Yen ; Lin, Chih-Yung ; Chou, Jih Wen ; Hsu, Charles Ching-Hsiang ; Pan, Hong-Tsz ; Ko, Joe

Author_Institution

Nat. Nano Device Lab., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

15

Issue

11

fYear

1994

Firstpage

437

Lastpage

439

Abstract

The boron-penetration-dependent Reverse Short Channel Effect (RSCE) on the threshold voltage is observed for short channel p/sup +/ poly-gate PMOSFET´s. The RSCE is found to be more significant as the boron penetration becomes more severe. The RSCE is significant in BF/sub 2/ doped poly-gated MOS devices and is alleviated in buffered poly-gated MOS devices. Fluorine enhanced boron diffusion in the gate oxide during high temperature process is believed to account for the RSCE, which is also confirmed by using a two-dimensional process simulator.<>

Keywords

MOSFET; boron; chemical interdiffusion; diffusion; elemental semiconductors; silicon; B penetration-dependent effect; BF/sub 2/ doped poly-gated MOS devices; F enhanced B diffusion; P-channel MOSFET; PMOSFET; Si:B; Si:BF/sub 2/; anomalous reverse short-channel effect; buffered poly-gated MOS devices; gate oxide; high temperature processing; p/sup +/ polysilicon gated; threshold voltage; two-dimensional process simulator; Boron; CMOS technology; Implants; Ion implantation; Laboratories; MOS devices; MOSFET circuits; Microelectronics; Temperature; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.334659

Filename

334659