Title :
Superthin O/N/O stacked dielectrics formed by oxidizing thin nitrides in low pressure oxygen for high-density memory devices
Author :
Su, H.P. ; Liu, H.W. ; Hong, G. ; Cheng, H.C.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
High-performance superthin oxide/nitride/oxide (O/N/O) stacked dielectrics have been successfully achieved by oxidizing thin nitride films in low-pressure dry-oxygen at 850/spl deg/C for 30 min. Since the nitrides exhibit a better oxidation resistance to the low-pressure dry-oxygen than to the atmospheric-pressure dry-oxygen and wet-oxygen, the low pressure oxidation obtains a thinner oxidized nitride for the high-density dynamic-random-access-memories (DRAM´s) and metal-oxide-nitride-oxide-semiconductor (MONO´S) memory devices. In addition, this dielectric possesses low leakage current and excellent time-dependent-dielectric-breakdown (TDDB) characteristics. Therefore, this novel recipe is promising for future ULSI technology.<>
Keywords :
DRAM chips; ULSI; dielectric thin films; electric breakdown; leakage currents; oxidation; 30 min; 850 C; DRAM; MONO memory devices; ULSI technology; atmospheric-pressure dry-oxygen; high-density dynamic-random-access-memories; high-density memory devices; low leakage current; low pressure oxidation; low pressure oxygen; low-pressure dry-oxygen; metal-oxide-nitride-oxide-semiconductor memory devices; oxidation resistance; oxide/nitride/oxide stacked dielectrics; oxidizing; superthin O/N/O stacked dielectrics; thin nitride films; thin nitrides; time-dependent-dielectric-breakdown; Atmospheric measurements; Dielectric constant; Dielectric devices; Dielectric measurements; Dielectric substrates; Leakage current; Optical films; Oxidation; Oxygen; Thickness measurement;
Journal_Title :
Electron Device Letters, IEEE
