Title :
The Island-Gate Varactor—A High-Q MOS Varactor for Millimeter-Wave Applications
Author :
Oh, Yongho ; Kim, Sooyeon ; Lee, Seungyong ; Rieh, Jae-Sung
Author_Institution :
Sch. of Electr. Eng., Korea Univ., Seoul
fDate :
4/1/2009 12:00:00 AM
Abstract :
A new accumulation MOS varactor with island-shaped poly gate layout is proposed to improve the quality factor ( Q-factor) at high frequency, which can be readily employed for CMOS-based millimeter-wave applications. Measured results up to 67 GHz show significant improvements in the Q-factor and the series resistance Rs over the conventional multi-finger MOS varactors with the same ground rule and gate area. The proposed island-gate MOS varactor is expected to improve the overall Q-factor of the LC tank of millimeter-wave oscillators.
Keywords :
CMOS integrated circuits; MIMIC; Q-factor; varactors; CMOS-based millimeter-wave applications; LC tank; MOS varactor; Q-factor; high-Q MOS varactor; island-gate MOS varactor; millimeter-wave applications; series resistance; $Q$-factor; Millimeter-wave; varactors;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2009.2015499
