Title :
Monolithic NMOS digital integrated circuits in 6H-SiC
Author :
Xie, W. ; Cooper, J.A., Jr. ; Melloch, M.R.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
We report the first digital monolithic integrated circuits in the wide bandgap semiconductor silicon carbide (SiC). These logic gates are implemented in enhancement-mode NMOS using ion implanted MOSFET´s with non-self-aligned metal gates. We have fabricated and characterized inverters, NAND and NOR gates, XNOR gates, D-latches, RS flip-flops, binary counters, and half adders. All circuits operate properly from room temperature to over 300/spl deg/C.<>
Keywords :
MOS logic circuits; adders; counting circuits; flip-flops; logic gates; silicon compounds; wide band gap semiconductors; 20 to 300 degC; 6H-SiC; D-latches; NAND gates; NMOS digital integrated circuits; NOR gates; RS flip-flops; SiC; XNOR gates; binary counters; enhancement-mode NMOS; half adders; inverter; ion implanted MOSFETs; logic gates; nonself-aligned metal gates; wide bandgap semiconductor; Adders; Counting circuits; Digital integrated circuits; Flip-flops; Inverters; Logic gates; MOS devices; Monolithic integrated circuits; Silicon carbide; Wide band gap semiconductors;
Journal_Title :
Electron Device Letters, IEEE
