Title :
RF performance of SiC MESFET´s on high resistivity substrates
Author :
Sriram, S. ; Clarke, R.C. ; Burk, A.A., Jr. ; Hobgood, H.M. ; McMullin, P.G. ; Orphanos, P.A. ; Siergiej, R.R. ; Smith, T.J. ; Brandt, C.D. ; Driver, M.C. ; Hopkins, R.H.
Author_Institution :
Sci. & Technol. Center, Westinghouse Electr. Corp., Pittsburgh, PA, USA
Abstract :
State-of-the art SiC MESFET´s showing a record high f/sub max/ of 26 GHz and RF gain of 8.5 dB at 10 GHz are described in this paper. These results were obtained by using high-resistivity SiC substrates for the first time to minimize substrate parasitics. The fabrication and characterization of these devices are discussed.<>
Keywords :
Schottky gate field effect transistors; characteristics measurement; microwave field effect transistors; semiconductor materials; semiconductor technology; silicon compounds; 10 GHz; 26 GHz; 8.5 dB; MESFETs; RF performance; SiC; device characterization; device fabrication; high resistivity substrates; microwave operation; substrate parasitics; Buffer layers; Crystals; Etching; Fabrication; Fingers; MESFETs; Radio frequency; Silicon carbide; Substrates; Thermal conductivity;
Journal_Title :
Electron Device Letters, IEEE
