An efficient method for plasma-charging damage measurement

The initial slope of the voltage versus time curve during constant current stressing of gate-oxide has been demonstrated, for the first time, as a good indicator for plasma-charging damage. This method of damage measurement measures the charge trapping rate of the gate-oxide directly while it is under a high-field stress. It combines the stressing and measuring steps in one rapid measurement. Using only capacitors as testing vehicle, this method does not require extensive processing. Using current stressing instead of CV measurement, this method greatly reduces the measurement time and the size requirement of the capacitor. The ability of this measurement method in bringing out the passivated defects after annealing is demonstrated. An example of using this method in detecting plasma-charging damage is included.<>