The MGBT: a new MOS-gated power bipolar transistor

Author

Ajit, J.S. ; Kinzer, D.M.

Author_Institution

Int. Rectifier Corp., El Segundo, CA, USA

Volume

15

Issue

11

fYear

1994

Firstpage

469

Lastpage

471

Abstract

A new device called the MGBT is described in which the upper regions of the device structure are conductivity-modulated by a positive feedback mechanism to give a lower on-state voltage drop compared to a power DMOSFET while having fast switching and fully gate-controlled characteristics. In the MGBT, a P/sup +/ injector coupled to the drain potential by a vertical driver DMOSFET in an emitter-switched configuration is used to inject holes which is then diverted to the entire surface region of the device by a novel cell design. 750 V MGBT devices fabricated along with DMOSFET devices on the same wafer showed 33% improvement in current density at room temperature and 46% improvement at 75/spl deg/C at a forward drop of 3.5 V. The turn-off time of the MGBT was 80 ns equal to that of the DMOSFET.<>

Keywords

avalanche breakdown; bipolar transistor switches; current density; power bipolar transistors; power semiconductor switches; semiconductor device reliability; semiconductor device testing; 20 to 75 degC; 3.5 V; 750 V; 80 ns; MGBT; MOS-gated power bipolar transistor; P/sup +/ injector; avalanche capability; cell design; conductivity-modulated upper regions; current density; emitter-switched configuration; forward drop; fully gate-controlled characteristics; on-state voltage drop; positive feedback mechanism; surface region; turn-off time; Bipolar transistors; Conductivity; Current density; Driver circuits; Feedback; Impedance; Insulated gate bipolar transistors; MOSFETs; Temperature; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.334670

Filename

334670