• DocumentCode
    1202483
  • Title

    A K-Band High-Gain Down-Conversion Mixer in 0.18 \\mu m CMOS Technology

  • Author

    Ahn, Dukju ; Kim, Dong-Wook ; Hong, Songcheol

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon
  • Volume
    19
  • Issue
    4
  • fYear
    2009
  • fDate
    4/1/2009 12:00:00 AM
  • Firstpage
    227
  • Lastpage
    229
  • Abstract
    A high gain CMOS down conversion mixer with a gain enhancement technique is presented. This technique includes negative resistance generation, parasitic capacitance cancellation and current-injection. These are implemented with an additional circuitry. This mixer has a conversion gain of 9.12 dB, input 1 dB compression point of -11 dBm at 24 GHz, while consuming 16.2 mW from 1.8 V supply. Between 22 and 26 GHz, the LO-to-RF and RF-to-LO isolations are better than 35 dB and 26 dB, respectively.
  • Keywords
    CMOS integrated circuits; MMIC mixers; field effect MMIC; CMOS technology; K-band high-gain down-conversion mixer; LO-to-RF isolation; RF-to-LO isolation; current injection; frequency 22 GHz to 26 GHz; gain 9.12 dB; gain enhancement technique; negative resistance generation; parasitic capacitance cancellation; power 16.2 mW; size 0.18 mum; voltage 1.8 V; CMOS; Gilbert cell; K-band; high gain; mixer;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2009.2015504
  • Filename
    4804629
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1202483