DocumentCode :
1202483
Title :
A K-Band High-Gain Down-Conversion Mixer in 0.18 
m CMOS Technology
Author :
Ahn, Dukju ; Kim, Dong-Wook ; Hong, Songcheol
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon
Volume :
19
Issue :
4
fYear :
2009
fDate :
4/1/2009 12:00:00 AM
Firstpage :
227
Lastpage :
229
Abstract :
A high gain CMOS down conversion mixer with a gain enhancement technique is presented. This technique includes negative resistance generation, parasitic capacitance cancellation and current-injection. These are implemented with an additional circuitry. This mixer has a conversion gain of 9.12 dB, input 1 dB compression point of -11 dBm at 24 GHz, while consuming 16.2 mW from 1.8 V supply. Between 22 and 26 GHz, the LO-to-RF and RF-to-LO isolations are better than 35 dB and 26 dB, respectively.
Keywords :
CMOS integrated circuits; MMIC mixers; field effect MMIC; CMOS technology; K-band high-gain down-conversion mixer; LO-to-RF isolation; RF-to-LO isolation; current injection; frequency 22 GHz to 26 GHz; gain 9.12 dB; gain enhancement technique; negative resistance generation; parasitic capacitance cancellation; power 16.2 mW; size 0.18 mum; voltage 1.8 V; CMOS; Gilbert cell; K-band; high gain; mixer;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2009.2015504
Filename :
4804629
Link To Document :
