Title :
0.10 μm graded InGaAs channel InP HEMT with 305 GHz fT and 340 GHz fmax
Author :
Wojtowicz, M. ; Lai, R. ; Streit, D.C. ; Ng, G.I. ; Block, T.R. ; Tan, K.L. ; Liu, P.H. ; Freudenthal, A.K. ; Dia, R.M.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
We report here 305 GHz fT, 340 GHz fmax, and 1550 mS/mm extrinsic g/sub m/ from a 0.10 μm In/sub x/Ga/sub 1-x/As/In/sub 0.62/Al/sub 0.48/As/InP HEMT with x graded from 0.60 to 0.80. This device has the highest fT yet reported for a 0.10 μm gate length and the highest combination of fT and fmax reported for any three-terminal device. This performance is achieved by using a graded-channel design which simultaneously increases the effective indium composition of the channel while optimizing channel thickness.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; millimetre wave field effect transistors; 0.1 micron; 305 GHz; 340 GHz; InGaAs-In/sub 0.52/Al/sub 0.48/As-InP; InP HEMT; channel thickness optimisation; graded InGaAs channel; microwave transistor; Capacitive sensors; Carrier confinement; Degradation; Design optimization; Electron mobility; Frequency; HEMTs; Indium gallium arsenide; Indium phosphide; Performance analysis;
Journal_Title :
Electron Device Letters, IEEE
