A Tail-Injected Divide-by-4 SiGe HBT Injection Locked Frequency Divider

Author

Jang, Sheng-Lyang ; Liu, Cheng Chen ; Chung, Chia-Wei

Author_Institution

Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei

Volume

19

Issue

4

fYear

2009

fDate

4/1/2009 12:00:00 AM

Firstpage

236

Lastpage

238

Abstract

This letter presents a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) divide-by-4 injection locked frequency divider (ILFD). The ILFD is based on a single-stage voltage-controlled oscillator with active-inductor, and was fabricated in the 0.35 mu m SiGe 3P3M BiCMOS technology. The divide-by-4 function is performed by injecting a signal to the base of the tail HBT. Measurement results show that when the supply voltage V_DD is 3.1 V and the tuning voltage is tuned from 2.0 to 2.8 V, the divider free-running oscillation frequency is tunable from 2.12 to 2.76 GHz, and at the incident power of 0 dBm the operation range is about 1.15 GHz, from the incident frequency 8.55 to 9.7 GHz. The die area is 0.65 times 0.435 mm².

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; frequency dividers; heterojunction bipolar transistors; inductors; voltage-controlled oscillators; HBT injection locked frequency divider; SiGe; active-inductor; divide-by-4 injection locked frequency divider; frequency 2.12 GHz to 2.76 GHz; frequency 8.55 GHz to 9.7 GHz; heterojunction bipolar transistor; single-stage voltage-controlled oscillator; size 0.35 mum; voltage 2 V to 2.8 V; voltage 3.1 V; Active inductor; SiGe heterojunction bipolar transistor (HBT); divide-by-4 injection-locked frequency divider (ILFD); operation range; tail injection;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2009.2015508

Filename

4804636