Title :
A 3–8 GHz Low-Noise CMOS Amplifier
Author :
Meaamar, Ali ; Chye, Boon Chirn ; Anh, Do Man ; Seng, Yeo Kiat
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fDate :
4/1/2009 12:00:00 AM
Abstract :
A wideband CMOS low-noise amplifier (LNA) is proposed by using the concept of mutual coupling technique implemented through a symmetric center-tap inductor. A frequency widening network is designed with a center-tap inductor at the input and the output of an LNA to achieve bandwidth extension with a single stage amplifier. The proposed wideband low noise amplifier is implemented in the 0.18 mum CMOS technology. This design obtains a bandwidth of 3-8 GHz with a power consumption of 3.77 mW from a 1.8 V supply.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; field effect MMIC; inductors; low noise amplifiers; wideband amplifiers; bandwidth 5 GHz; frequency 3 GHz to 8 GHz; frequency widening network; low-noise CMOS amplifier; mutual coupling technique; power 3.77 mW; size 0.18 micron; symmetric center-tap inductor; voltage 1.8 V; wideband CMOS LNA; Bandwidth extension; CMOS; center-tap inductor; filter; low-noise amplifier (LNA); passband;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2009.2015512
