Title :
Low threshold CW operation of circular-grating surface-emitting DBR lasers using MQW and a self-aligned process
Author :
Fallahi, M. ; Dion, M. ; Chatenoud, F. ; Templeton, I.M. ; Barber, R. ; Sedivy, J.
Author_Institution :
Solid State Optoelectronics Consortium, Nat. Res. Council of Canada, Ottawa, Ont., Canada
Abstract :
In this letter, we present the first room temperature continuous wave operation of circular-grating surface-emitting DBR lasers. The structure is an InGaAs/GaAs strained multiquantum-well. A modified fabrication process with a better control on the steps is used. A CW threshold current as low as 26 mA at a lasing wavelength of about 977 mm are reported. This is the first demonstration of CW operation for these lasers in any material system.<>
Keywords :
III-V semiconductors; diffraction gratings; gallium arsenide; indium compounds; optical fabrication; quantum well lasers; surface emitting lasers; 26 mA; 977 nm; CW operation; CW threshold current; InGaAs-GaAs; InGaAs/GaAs strained multiquantum-well; MQW; circular-grating surface-emitting DBR lasers; lasing wavelength; low threshold CW operation; material system; modified fabrication process; room temperature continuous wave operation; self-aligned process; Distributed Bragg reflectors; Gallium arsenide; Gratings; Indium gallium arsenide; Optical device fabrication; Optical surface waves; Quantum well devices; Surface emitting lasers; Surface waves; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
