DocumentCode
1202847
Title
Strained-layer InGaAsP diode lasers with tapered gain region for operation at /spl lambda/=1.3 μm
Author
Groves, S.H. ; Donnelly, J.P. ; Walpole, J.N. ; Woodhouse, J.D. ; Missaggia, L.J. ; Bailey, R.J. ; Napoleone, A.
Author_Institution
Lincoln Lab., MIT, Lexington, MA, USA
Volume
6
Issue
11
fYear
1994
Firstpage
1286
Lastpage
1288
Abstract
A report is given of the first high-power InP-based tapered lasers. Continuous output powers of 0.5 W with nearly 80% of the power in the central lobe have been obtained. This is the highest reported brightness of a 1.3 μm source.
Keywords
III-V semiconductors; brightness; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; 0.5 W; 1.3 /spl mu/m source; 1.3 mum; 80 percent; InGaAsP; InGaAsP diode lasers; InP-based tapered lasers; brightness; central lobe; continuous output powers; high-power; strained-layer; tapered gain region; Brightness; Diode lasers; Doping; Etching; Indium phosphide; Optical materials; Photonic band gap; Power generation; Quantum well lasers; Substrates;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.334815
Filename
334815
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