A strained-layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED by selective-area metalorganic chemical vapor deposition

Author

Osowski, M.L. ; Cockerill, T.M. ; Lammert, R.M. ; Forbes, D.V. ; Ackley, D.E. ; Coleman, J.J.

Author_Institution

Mater. Res. Lab., Illinois Univ., Urbana, IL, USA

Volume

6

Issue

11

fYear

1994

Firstpage

1289

Lastpage

1292

Abstract

Three-step selective area metalorganic chemical vapor deposition is used to fabricate strained layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LEDs. We have fabricated a device with a continuous variation in quantum well thickness along its length by using a tapered oxide width mask for the active region regrowth. A spectral emission width of 80 nm is obtained.<>

Keywords

CVD coatings; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; light emitting diodes; semiconductor growth; semiconductor quantum wells; InGaAs-GaAs-AlGaAs; active region regrowth; broad spectrum LED; quantum well thickness; selective-area metalorganic chemical vapor deposition; single quantum well; spectral emission width; strained-layer; tapered oxide width mask; three-step; Chemical vapor deposition; Laser feedback; Light emitting diodes; Light sources; Optical feedback; Optical transmitters; Quantum well lasers; Stimulated emission; Superluminescent diodes; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.334816

Filename

334816