Title :
High temperature characteristics of strained InGaAs/lnGaAsP quantum well lasers lattice matched to GaAs
Author :
Park, Seoung-Hwan ; Jeong, Weon-Guk ; Choe, Byung-Doo
Author_Institution :
Dept. of Phys., Hyosung Women´´s Univ., Kyeongbuk, South Korea
Abstract :
The effect of high temperature on the threshold current density and the gain of In/sub x/Ga/sub 1-x/As/InGaAsP (E/sub g/=1.6 eV) QW lasers lattice matched to GaAs is investigated theoretically. These results are also compared with those of In/sub x/Ga/sub 1-x/As/GaAs QW lasers. It is found that better performance can be achieved in InGaAs/InGaAsP lasers compared to InGaAs/GaAs lasers at high temperature. This is due to the fact that the temperature dependence of the threshold carrier density for InGaAs/InGaAsP lasers is weaker than that for InGaAs/GaAs lasers. The calculated characteristic temperature is in good agreement with reported experimental results.<>
Keywords :
Debye temperature; III-V semiconductors; carrier density; current density; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; 1.6 eV; GaAs; InGaAs-InGaAsP; high temperature; high temperature characteristics; lattice matched; strained InGaAs/lnGaAsP quantum well lasers; temperature dependence; threshold carrier density; threshold current density; Charge carrier processes; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Laser theory; Lattices; Pump lasers; Quantum mechanics; Quantum well lasers; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
