Title :
Temperature dependence of light-current characteristics of 0.98-μm Al-free strained-quantum-well lasers
Author :
Vail, E.C. ; Nabiev, R.F. ; Chang-Hasnain, Connie J.
Author_Institution :
Ginzton Lab., Stanford Univ., CA, USA
Abstract :
The decrease of the differential efficiency of 0.98-μm semiconductor lasers with temperature can make high power, high temperature applications difficult. We present an experimental and theoretical study of the temperature dependence of the internal quantum efficiency, internal loss and differential gain of 0.98-μm InGaAs/InGaAsP/InGaP strained quantum well lasers. In contrast to some earlier results, our measurements show the dominance of internal loss, attributed to free carrier absorption, in determining the temperature dependence of the differential efficiency, and show that leakage current is negligible below 120/spl deg/C.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical losses; quantum well lasers; 0.98 mum; 0.98-/spl mu/m Al-free strained-quantum-well lasers; 0.98-/spl mu/m semiconductor lasers; 120 C; InGaAs-InGaAsP-InGaP; InGaAs/InGaAsP/InGaP strained quantum well lasers; differential efficiency; differential gain; free carrier absorption; high power; high temperature applications; internal loss; internal quantum efficiency; leakage current; light-current characteristics; temperature dependence; Absorption; Current measurement; Indium gallium arsenide; Laser theory; Loss measurement; Power lasers; Quantum mechanics; Quantum well lasers; Semiconductor lasers; Temperature dependence;
Journal_Title :
Photonics Technology Letters, IEEE
